| PART |
Description |
Maker |
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| A43L1632V-6 A43L1632V-7 A43L1632 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| A43L0632G-7UF A43L0632 A43L0632G-6UF A43L0632G-7F |
512K X 32 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
| A43L0616BV A43L0616B A43L0616BV-6 A43L0616BV-6F A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A- |
Synchronous DRAM(512K X 32 Bit X 4 Banks)
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| IC42S16101-6T |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solu...
|
| A43L0616BV-7F A43L0616BV-6F A43L0616BV-7UF |
512K X 16 Bit X 2 Banks Synchronous DRAM 12k × 16位2银行同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A43E06321G-95UF A43E06321G-75UF A43E06321G-75F A43 |
General Purpose
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 12k × 32位2银行低功耗同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
